HUFA76407DK8T-F085 Datasheet | onsemi

Features General Description These N-Channel power MOSFETs are manufactured using the innovative Ultra FET® process. This advanced process - Ultra-Low On-Resistance r DS(on) = 0.090 at VGS = 10 V - Ultra-Low On-Resistance r DS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is - Peak Current vs Pulse Width Curve capable of withstanding high energy - UIS Rating Curve in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in - Transient Thermal Impedance Curve vs Board Mounting Area applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay - Switching Time vs RGS Curves drivers, low-voltage bus switches, and power management in portable and battery-operated products. - Qualified to AEC Q101 - Ro HS pliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS VDRG VGS IDM UIS PD TJ, TSTG TL Tpkg Parameter Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20kΩ) Gate to Source Voltage (Note 1) Drain Current -Continuous (TA = 25 °C, VGS = 5V) -Continuous (TA = 25 °C, VGS = 10V) (Figure 2) -Continuous (TA = 100 °C, VGS = 5V) -Continuous (TA = 100 °C, VGS = 4.5V) (Figure 2) Drain Current -Pulsed (Note 2) (Note 2) (Note 3) (Note 3) Pulsed Avalanche Rating Power Dissipation (Note 2) Derate Above 25 °C Operating and Storage Junction Temperature Range Temperature for Soldering - Leads at 0.063in (1.6mm) from Case for 10s Temperature for Soldering - Package Body for 10s, See Techbrief TB334 Package Marking and Ordering Information Ratings 60 60 ±16 3.5 3.8 1 1 Figure 4 Figures 6, 17, 18 2.5 20 -55 to +150 300 260 Units V V V W m...