HUFA76407DK8T-F085 Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is Peak Current vs Pulse Width Curve capable of withstanding high energy UIS...
HUFA76407DK8T-F085 Key Features
- Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V
- Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Transient Thermal Impedance Curve vs Board Mounting Area