HUFA76407DK8T-F085
Overview
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance.
